THERMAL-STABILITY OF SI/GEXSI1-X/SI HETEROSTRUCTURES

被引：36

作者：

HULL, R

BEAN, JC

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 18期

关键词：

D O I：

10.1063/1.102165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1900 / 1902

页数：3

共 19 条

[1]

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[2]

BEAN JC, 1985, MATER RES SOC S P, V37, P245

[3]

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[4]

Hirsch P.B., 1981, I PHYS C SER, V60, P29

[5]

HIRTH JP, 1968, THEORY DISLOCATION, P485

[6] ACTIVATION BARRIERS TO STRAIN RELAXATION IN LATTICE-MISMATCHED EPITAXY [J].

HULL, R ;

BEAN, JC ;

WERDER, DJ ;

LEIBENGUTH, RE .

PHYSICAL REVIEW B, 1989, 40 (03) :1681-1684

[7] INSITU OBSERVATIONS OF MISFIT DISLOCATION PROPAGATION IN GEXSI1-X/SI(100) HETEROSTRUCTURES [J].

HULL, R ;

BEAN, JC ;

WERDER, DJ ;

LEIBENGUTH, RE .

APPLIED PHYSICS LETTERS, 1988, 52 (19) :1605-1607

[8] VARIATION IN MISFIT DISLOCATION BEHAVIOR AS A FUNCTION OF STRAIN IN THE GESI SI SYSTEM [J].

HULL, R ;

BEAN, JC .

APPLIED PHYSICS LETTERS, 1989, 54 (10) :925-927

[9] NUCLEATION OF MISFIT DISLOCATIONS IN STRAINED-LAYER EPITAXY IN THE GEXSI1-X/SI SYSTEM [J].

HULL, R ;

BEAN, JC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (04) :2580-2585

[10]

HULL R, 1988, IN PRESS SEP P NATO

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