ENERGY-DISTRIBUTIONS OF SECONDARY IONS FROM GAAS

被引:10
作者
LAU, WM
机构
关键词
D O I
10.1016/0168-583X(86)90224-7
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:41 / 43
页数:3
相关论文
共 7 条
[1]   IONIZATION PROBABILITY OF SPUTTERED ATOMS [J].
LANG, ND .
PHYSICAL REVIEW B, 1983, 27 (04) :2019-2029
[2]   STABILIZATION OF CHARGE ON ELECTRICALLY INSULATING SURFACES DURING SIMS EXPERIMENTS - EXPERIMENTAL AND THEORETICAL-STUDIES OF THE SPECIMEN ISOLATION METHOD [J].
LAU, WM ;
MCINTYRE, NS ;
METSON, JB ;
COCHRANE, D ;
BROWN, JD .
SURFACE AND INTERFACE ANALYSIS, 1985, 7 (06) :275-281
[3]   ENERGY-DEPENDENCE OF THE IONIZATION PROBABILITY OF SPUTTERED CU AND NI [J].
LUNDQUIST, TR .
SURFACE SCIENCE, 1979, 90 (02) :548-556
[4]   IONIZATION OF ATOMIC PARTICLES SPUTTERED FROM SOLIDS [J].
SROUBEK, Z ;
ZDANSKY, K ;
ZAVADIL, J .
PHYSICAL REVIEW LETTERS, 1980, 45 (07) :580-583
[5]   ION-STIMULATED DESORPTION OF POSITIVE HALOGEN IONS [J].
WILLIAMS, P .
PHYSICAL REVIEW B, 1981, 23 (11) :6187-6190
[6]   IONIZATION MECHANISM OF H+ SPUTTERED FROM HYDROGENATED SILICON [J].
WITTMAACK, K .
PHYSICAL REVIEW LETTERS, 1979, 43 (12) :872-875
[7]   VELOCITY DEPENDENCE OF THE IONIZATION PROBABILITY OF SPUTTERED ATOMS [J].
YU, ML .
PHYSICAL REVIEW LETTERS, 1981, 47 (18) :1325-1328