ELECTRICAL-PROPERTIES OF THIN HIGH-DIELECTRIC TA2O5 FILMS

被引：10

作者：

RAUSCH, N ^{[1
]}

BURTE, EP ^{[1
]}

机构：

[1] FRAUNHOFER INST INTEGRIERTE SCHALTUNGEN,D-91058 ERLANGEN,GERMANY

来源：

MICROELECTRONICS JOURNAL | 1994年 / 25卷 / 07期

关键词：

D O I：

10.1016/0026-2692(94)90038-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical properties and the conduction mechanisms of leakage current in tantalum pentoxide (Ta2O5) prepared by a low pressure metal organic chemical vapour deposition (LPMOCVD) process have been studied. After deposition, the films have been annealed at temperatures up to 900 degrees C in oxygen and nitrogen ambient. The conduction mechanisms in polycrystalline Ta2O5 films are discussed.

引用

页码：533 / 537

页数：5

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