GAMMA-XZ MIXING IN GAAS/ALAS SUPERLATTICES OF TYPE-II

被引：12

作者：

MAAREF, M

CHARFI, FF

SCALBERT, D

GUILLAUME, CB

PLANEL, R

机构：

[1] UNIV PARIS 07, PHYS SOLIDES GRP, F-75251 PARIS 05, FRANCE

[2] UNIV PARIS 06, F-75230 PARIS 05, FRANCE

[3] LAB MICROSTRUCT & MICROELECTR, F-92260 BAGNEUX, FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 81卷 / 01期

关键词：

D O I：

10.1016/0038-1098(92)90566-R

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

From a time-resolved photoluminescence investigation of two GaAs/AlAs short period superlattices near the type I - type II transition at intermediate temperature, one can extract the ratio of the two transition probabilities R(chi)/R(GAMMA) of radiative recombination of excitons built with GAMMA-holes and chi or GAMMA-electrons. A value of 4 meV is found for the matrix element of the superlattice potential between GAMMA and chi(z) states. The analysis of the decay of the two luminescence bands gives some insight into the GAMMA --> chi-transfer mechanism.

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收藏

页码：35 / 40

页数：6

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