MOCVD GROWTH OF SELECTIVELY DOPED ALLNAS/GALNAS HETEROSTRUCTURES AND ITS APPLICATION TO HIFETS (HETEROINTERFACE FETS)

被引：8

作者：

KAMADA, M

ISHIKAWA, H

IKEDA, M

MORI, Y

KOJIMA, C

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 21期

关键词：

D O I：

10.1049/el:19860786

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1147 / 1148

页数：2

相关论文

共 4 条

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[3] 1ST OBSERVATION OF THE QUANTUM HALL-EFFECT IN A GA0.47IN0.53AS-INP HETEROSTRUCTURE WITH 3 ELECTRIC SUBBANDS
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[4] LOW-NOISE MICROWAVE HIFET FABRICATED USING PHOTOLITHOGRAPHY AND MOCVD
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[J]. ELECTRONICS LETTERS, 1986, 22 (09) : 487 - 488