LUMINESCENCE LIFETIME DISTRIBUTIONS IN MU-C-SI AND GLOW-DISCHARGE AND SPUTTERED A-SI-H

被引：9

作者：

BHAT, PK

AUSTIN, IG

SEARLE, TM

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90600-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：381 / 384

页数：4

共 8 条

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[2] THE 0.9EV DEFECT LUMINESCENCE BAND IN SPUTTERED AND OTHER FORMS OF PLASMA-DEPOSITED A-SI-H [J].

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AUSTIN, IG ;

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[3] TEMPERATURE-DEPENDENCE OF THE ODMR SIGNALS IN A-SI - H - ROOM-TEMPERATURE ODMR [J].

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DEPINNA, SP ;

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AUSTIN, IG ;

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PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (05) :L57-L62

[5] A DIRECT DETERMINATION OF THE LIFETIME DISTRIBUTION OF THE 1.4 EV LUMINESCENCE OF A-SI-H [J].

DUNSTAN, DJ ;

DEPINNA, SP ;

CAVENETT, BC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (13) :L425-L429

[6] LUMINESCENCE AND ELECTRON-SPIN-RESONANCE STUDIES OF DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].

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[7] DEFECT STATES IN DOPED AND COMPENSATED A-SI-H [J].

STREET, RA ;

BIEGELSEN, DK ;

KNIGHTS, JC .

PHYSICAL REVIEW B, 1981, 24 (02) :969-984

[8] RECOMBINATION IN PLASMA-DEPOSITED AMORPHOUS SI-H - LUMINESCENCE DECAY [J].

TSANG, C ;

STREET, RA .

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