PHOTOCURRENT MULTIPLICATION IN A HYDROGENATED AMORPHOUS SILICON-BASED P-I-N JUNCTION WITH AN A-SIN-H LAYER

被引:22
作者
YOSHIMI, M
ISHIKO, T
HATTORI, K
OKAMOTO, H
HAMAKAWA, Y
机构
[1] Faculty of Engineering Science, Osaka University, Toyonaka
关键词
D O I
10.1063/1.351481
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photocurrent multiplication has been observed in a hydrogenated amorphous silicon-based p-i/a-SiN:H/i-n structure junction under a reverse biased condition. A systematic investigation on the photocurrent characteristics in this junction system has been carried out. It has been shown from the analysis of the results that multiplication arises from the interband tunneling injection of valence band "electron" through the a-SiN:H barrier layer. A device modeling on the basis of the experimental data permits us to design the device structure for achieving better performances. As a preliminary optimization of device structure, an external quantum efficiency exceeding 70 has been obtained under the operation voltage 30 V in the heterojunction photodiode having an a-SiN:H (thickness of 40 nm with optical energy gap 2.1 eV) at the p a-SiC:H/i a-Si:H interface. The proposed highly sensitive photomultiplier device might have a wide variety of application fields such as a solid-state imager for high-definition televisions, etc.
引用
收藏
页码:3186 / 3193
页数:8
相关论文
共 13 条
[1]  
Fritzsche H, 1974, AMORPHOUS LIQUID SEM, P313
[2]  
HIRAI T, 1982, AMORPHOUS SEMICONDUC, P264
[3]   PHOTOCURRENT MULTIPLICATION IN AMORPHOUS-SILICON CARBIDE FILMS [J].
HIRAMOTO, M ;
YOSHIMURA, K ;
NAKAYAMA, Y ;
AKITA, S ;
KAWAMURA, T ;
YOKOYAMA, M .
APPLIED PHYSICS LETTERS, 1991, 59 (16) :1992-1994
[4]   THE HYDROGENATED AMORPHOUS-SILICON REACH-THROUGH AVALANCHE PHOTODIODES (A-SI-H RAPDS) [J].
HONG, JW ;
CHEN, YW ;
LAIH, WL ;
FANG, YK ;
CHANG, CY ;
GONG, C .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (02) :280-284
[5]   OPTIMIZATION OF GD A-SI-H FILM PROPERTY FOR PHOTO-VOLTAIC DEVICE BY MEANS OF THE CROSS FIELD PLASMA DEPOSITION TECHNIQUE [J].
HOTTA, S ;
NISHIMOTO, N ;
TAWADA, Y ;
OKAMOTO, H ;
HAMAKAWA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) :289-295
[6]   IMPACT IONIZATION AND MOBILITIES OF CHARGE-CARRIERS AT HIGH ELECTRIC-FIELDS IN AMORPHOUS SELENIUM [J].
JUSKA, G ;
ARLAUSKAS, K .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 59 (01) :389-393
[7]   AMORPHOUS-SILICON SILICON-CARBIDE SUPERLATTICE AVALANCHE PHOTODIODES [J].
JWO, SC ;
WU, MT ;
FANG, YK ;
CHEN, YW ;
HONG, JW ;
CHANG, CY .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (08) :1279-1288
[8]  
Mott N. F., 1968, Journal of Non-Crystalline Solids, V1, P1, DOI 10.1016/0022-3093(68)90002-1
[9]   ANALYSIS OF JUNCTION AND FILM PROPERTIES IN HIGH-EFFICIENCY AMORPHOUS-SILICON SOLAR-CELLS [J].
NONOMURA, S ;
OKAMOTO, H ;
FUKUMOTO, K ;
KASHIMA, Y ;
HAMAKAWA, Y .
SOLAR CELLS, 1984, 11 (02) :97-104
[10]  
Sze S. M., 1981, PHYSICS SEMICONDUCTO, P402