PHOTOCURRENT MULTIPLICATION IN AMORPHOUS-SILICON CARBIDE FILMS

被引：15

作者：

HIRAMOTO, M

YOSHIMURA, K

NAKAYAMA, Y

AKITA, S

KAWAMURA, T

YOKOYAMA, M

机构：

[1] OSAKA UNIV,FAC ENGN,SUITA,OSAKA 565,JAPAN

[2] UNIV OSAKA PREFECTURE,DEPT ELECT ENGN,SAKAI,OSAKA 591,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 16期

关键词：

D O I：

10.1063/1.106160

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photocurrent multiplication reaching 300 times was recently observed in amorphous silicon carbide (a-SiC:H) films using a simple cell configuration of SnO2/a-SiC:H/Au. This phenomenon, which appeared only under the irradiation of bulk-absorbed red light, is not due to Avalanche effects, but is thought to result from electron tunneling from SnO2 to a-SiC:H film through a thin insulating thin silicon oxide layer formed at the a-SiC:H/SnO2 interface in a high electric field built up by the photoaccumulated space charges of trapped holes near the interface.

引用

页码：1992 / 1994

页数：3

共 12 条

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