QUANTUM DEVICE SIMULATION WITH A GENERALIZED TUNNELING FORMULA

被引：96

作者：

KLIMECK, G ^{[1
]}

LAKE, R ^{[1
]}

BOWEN, RC ^{[1
]}

FRENSLEY, WR ^{[1
]}

MOISE, TS ^{[1
]}

机构：

[1] UNIV TEXAS,ERIC JONSSON SCH ENGN,RICHARDSON,TX 75083

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 17期

关键词：

D O I：

10.1063/1.114451

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present device simulations based on a generalized tunneling theory. The theory is compatible with standard coherent tunneling approaches and significantly increases the variety of devices that can be simulated. Quasi-bound and continuum states in the leads are treated on the same footing. Quantum charge self-consistency is included in the leads and the central device region. We compare the simulated I-V characteristics with the experimental I-V characteristics for two complex quantum device structures and find good agreement. (C) 1995 American Institute of Physics.

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页码：2539 / 2541

页数：3

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