SELF-CONSISTENT MODELING OF RESONANT TUNNELING STRUCTURES

被引:15
作者
FIIG, T [1 ]
JAUHO, AP [1 ]
机构
[1] UNIV COPENHAGEN,HC ORSTED INST,PHYS LAB,DK-2100 COPENHAGEN,DENMARK
关键词
D O I
10.1016/0039-6028(92)91160-D
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report a comprehensive study of the effects of self-consistency on the I-V-characteristics of resonant tunnelling structures. The calculational method is based on a simultaneous solution of the effective-mass Schrodinger equation and the Poisson equation, and the current is evaluated with the Tsu-Esaki formula. We consider the formation of the accumulation layer in the emitter contact layer in a number of different approximation schemes, and we introduce a novel way to account for the energy relaxation of continuum states to the two-dimensional quasi-bound states appearing for certain applied voltages and carrier densities at the emitter-barrier interface. We include the two-dimensional accumulation layer charge and the quantum well charge in our self-consistent scheme. We discuss the evaluation of the current contribution originating from the two-dimensional accumulation layer charges, and our qualitative estimates seem consistent with recent experimental studies. The intrinsic bistability of resonant tunnelling diodes is analyzed within several different approximation schemes.
引用
收藏
页码:392 / 395
页数:4
相关论文
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