SELF-CONSISTENT MODEL FOR 2-DIMENSIONAL ACCUMULATION LAYER STATES IN RESONANT TUNNELING DEVICES

被引：15

作者：

FIIG, T ^{[1
]}

JAUHO, AP ^{[1
]}

机构：

[1] UNIV COPENHAGEN,HC ORSTED INST,PHYS LAB,DK-2100 COPENHAGEN,DENMARK

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 18期

关键词：

D O I：

10.1063/1.106084

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a simple model which allows a simultaneous and self-consistent treatment of extended and size-quantized states in biased double-barrier systems. Our model preserves charge neutrality in the asymptotic regions, and the self-consistent charge density is free of unphysical cusps, found in simple screening models. We discuss the implications of the 2D emitter states to the current-voltage characteristics.

引用

页码：2245 / 2247

页数：3

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