INADEQUACY OF THE ONE-DIMENSIONAL APPROXIMATION FOR RESONANT-TUNNELING-DIODE CURRENT-VOLTAGE CALCULATIONS

被引:19
作者
BOYKIN, TB
CARNAHAN, RE
MARTIN, KP
机构
[1] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
[2] GEORGIA INST TECHNOL,SCH ELECT ENGN,ATLANTA,GA 30332
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 04期
关键词
D O I
10.1103/PhysRevB.51.2273
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Evaluating the full expression for the tunneling current density in a resonant-tunneling diode generally involves the numerical computation of a triple integral. Since this presents such a formidable task, quite often one neglects any explicit dependence of the transmission coefficient on the wave vector in the plane of the interfaces, k, resulting in a single-integral expression. This one-dimensional approximation has been widely used in the literature. We demonstrate that this approximation, even when applied to rather ordinary devices, can lead to unphysical current-density bias graphs and explain the reasons behind the failure. © 1995 The American Physical Society.
引用
收藏
页码:2273 / 2281
页数:9
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