PERFORMANCE DEGRADATION DUE TO EXTRINSIC BASE ENCROACHMENT IN ADVANCED NARROW-EMITTER BIPOLAR CIRCUITS .1. BASIC INVERTER

被引：7

作者：

CHUANG, CT

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 09期

关键词：

D O I：

10.1109/16.34239

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1751 / 1756

页数：6

共 15 条

[1] FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM [J].

BUTURLA, EM ;

COTTRELL, PE ;

GROSSMAN, BM ;

SALSBURG, KA .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (04) :218-231

[2]

Chen T. C., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P650

[3] THE EFFECT OF EXTRINSIC BASE ENCROACHMENT ON THE SWITCH-ON TRANSIENT OF ADVANCED NARROW-EMITTER BIPOLAR-TRANSISTORS [J].

CHUANG, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (03) :309-313

[4] PERFORMANCE DEGRADATION DUE TO EXTRINSIC BASE ENCROACHMENT IN ADVANCED NARROW-EMITTER BIPOLAR CIRCUITS .2. NON-THRESHOLD LOGIC-CIRCUITS [J].

CHUANG, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) :1757-1763

[5] ON THE PUNCHTHROUGH CHARACTERISTICS OF ADVANCED SELF-ALIGNED BIPOLAR-TRANSISTORS [J].

CHUANG, CT ;

TANG, DDL ;

LI, GP ;

HACKBARTH, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (07) :1519-1524

[6]

CHUANG CT, 1987, IEEE ELECTR DEVICE L, V8, P321, DOI 10.1109/EDL.1987.26645

[7]

CHUANG CT, 1987, IEDM, P178

[8]

Hayasaka A., 1982, International Electron Devices Meeting. Technical Digest, P62

[9]

HODGES DA, 1983, ANAL DESIGN DIGITAL, P228

[10] IDENTIFICATION AND IMPLICATION OF A PERIMETER TUNNELING CURRENT COMPONENT IN ADVANCED SELF-ALIGNED BIPOLAR-TRANSISTORS [J].

LI, GP ;

HACKBARTH, E ;

CHEN, TC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (01) :89-95

← 1 2 →