PERFORMANCE DEGRADATION DUE TO EXTRINSIC BASE ENCROACHMENT IN ADVANCED NARROW-EMITTER BIPOLAR CIRCUITS .2. NON-THRESHOLD LOGIC-CIRCUITS

被引：3

作者：

CHUANG, CT

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 09期

关键词：

D O I：

10.1109/16.34240

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1757 / 1763

页数：7

共 15 条

[1] THE EFFECT OF EXTRINSIC BASE ENCROACHMENT ON THE SWITCH-ON TRANSIENT OF ADVANCED NARROW-EMITTER BIPOLAR-TRANSISTORS [J].

CHUANG, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (03) :309-313

[2] PERFORMANCE DEGRADATION DUE TO EXTRINSIC BASE ENCROACHMENT IN ADVANCED NARROW-EMITTER BIPOLAR CIRCUITS .1. BASIC INVERTER [J].

CHUANG, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) :1751-1756

[3] ON THE PUNCHTHROUGH CHARACTERISTICS OF ADVANCED SELF-ALIGNED BIPOLAR-TRANSISTORS [J].

CHUANG, CT ;

TANG, DDL ;

LI, GP ;

HACKBARTH, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (07) :1519-1524

[4]

CHUANG CT, 1987, IEDM, P178

[5]

HODGES DA, 1983, ANAL DESIGN DIGITAL, P248

[6] A 50-PS 7K-GATE MASTERSLICE USING MIXED CELLS CONSISTING OF AN NTL GATE AND AN LCML MACROCELL [J].

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IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1987, 22 (02) :202-207

[7]

KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164

[8]

KONAKA S, 1987, 19TH C SOL STAT DEV, P331

[9] ON THE NARROW-EMITTER EFFECT OF ADVANCED SHALLOW-PROFILE BIPOLAR-TRANSISTORS [J].

LI, GP ;

CHUANG, CT ;

CHEN, TC ;

NING, TH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (11) :1942-1950

[10] METHODOLOGY FOR BIPOLAR PROCESS DIAGNOSIS AND ITS APPLICATION TO ADVANCED SELF-ALIGNED BIPOLAR-TRANSISTORS [J].

LI, GP ;

HACKBARTH, E ;

CHUANG, CT ;

TANG, DDL ;

CHEN, TC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) :1736-1740

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