ELECTRONIC AND STRUCTURAL-PROPERTIES OF A TWIN BOUNDARY IN SI

被引:93
作者
DIVINCENZO, DP
ALERHAND, OL
SCHLUTER, M
WILKINS, JW
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
[2] UNIV PENN,DEPT PHYS,PHILADELPHIA,PA 19104
[3] CORNELL UNIV,CTR MAT SCI,ITHACA,NY 14853
[4] CORNELL UNIV,ATOM & SOLID STATE PHYS LAB,ITHACA,NY 14853
关键词
D O I
10.1103/PhysRevLett.56.1925
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1925 / 1928
页数:4
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共 12 条
  • [1] COMPLEX TETRAHEDRAL STRUCTURES OF SILICON AND CARBON UNDER PRESSURE
    BISWAS, R
    MARTIN, RM
    NEEDS, RJ
    NIELSEN, OH
    [J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3210 - 3213
  • [2] ATOMIC-STRUCTURE OF (011) AND (001) PURE TILT GRAIN-BOUNDARIES IN GERMANIUM AND SILICON
    BOURRET, A
    [J]. JOURNAL DE PHYSIQUE, 1985, 46 (NC-4): : 27 - 38
  • [3] BOURRET A, COMMUNICATION
  • [4] THEORETICAL-STUDY OF STACKING-FAULTS IN SILICON
    CHOU, MY
    COHEN, ML
    LOUIE, SG
    [J]. PHYSICAL REVIEW B, 1985, 32 (12): : 7979 - 7987
  • [5] 1ST AND 2ND ORDER TWIN BOUNDARIES IN EDGE DEFINED FILM GROWTH-SILICON RIBBON
    CUNNINGHAM, B
    STRUNK, H
    AST, DG
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 237 - 239
  • [6] ATOMIC-STRUCTURE OF [011] AND [001] NEAR-COINCIDENT TILT BOUNDARIES IN GERMANIUM AND SILICON
    DANTERROCHES, C
    BOURRET, A
    [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1984, 49 (06): : 783 - 807
  • [7] GRAIN-BOUNDARIES IN SEMICONDUCTORS
    GROVENOR, CRM
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (21): : 4079 - 4119
  • [8] COHESIVE PROPERTIES OF GE, SI, AND DIAMOND CALCULATED WITH MINIMUM BASIS-SETS
    HOLLAND, B
    GREENSIDE, HS
    SCHLUTER, M
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1984, 126 (02): : 511 - 515
  • [9] MODELS OF GRAIN BOUNDARIES IN THE DIAMOND LATTICE .1. TILT ABOUT (10)
    HORNSTRA, J
    [J]. PHYSICA, 1959, 25 (06): : 409 - 422
  • [10] TWIN BOUNDARY ENERGETICS IN PURE ALUMINUM
    MURR, LE
    [J]. ACTA METALLURGICA, 1973, 21 (06): : 791 - 797