LOW-RESISTIVITY INDIUM TIN OXIDE-FILMS BY PULSED-LASER DEPOSITION

被引：119

作者：

ZHENG, JP ^{[1
]}

KWOK, HS ^{[1
]}

机构：

[1] SUNY Buffalo, DEPT ELECT & COMP ENGN, BUFFALO, NY 14260 USA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 01期

关键词：

D O I：

10.1063/1.109736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Indium tin oxide films were grown by pulsed laser deposition on glass substrates. The electrical and optical properties of these films were studied. At optimized oxygen pressures, films with resistivity values of 1.4 X 10(-4) and 5.6 X 10(-4) OMEGA cm were deposited at substrate temperatures of 310 and 20-degrees-C, respectively. Films with a thickness of 180 nm had a transmission of nearly 100% for the wavelength range of 600-800 nm.

引用

页码：1 / 3

页数：3

共 16 条

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