Structure and stability of the out-of-phase boundary in a surface superlattice, Si(111)root 3x root 3R30 degrees-Ag

被引:14
作者
Nakayama, T [1 ]
Watanabe, S [1 ]
Aono, M [1 ]
机构
[1] JRDC,ERATO AONO ATOMCRAFT PROJECT,TOKYO,TOKYO 173,JAPAN
关键词
epitaxy; growth; scanning tunneling microscopy; silicon; silver; surface defects; surface relaxation and reconstruction; surface thermodynamics;
D O I
10.1016/0039-6028(95)00814-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The structure, stability, and formation mechanism of the out-of-phase boundary (OPE) in the Si(111)root 3x root 3R30 degrees-Ag surface-superlattice structure are discussed on the basis of scanning tunneling microscopy observations. An important factor that determines the density of the OPE is also discussed.
引用
收藏
页码:143 / 148
页数:6
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