SCANNING TUNNELING MICROSCOPY STUDY OF INITIAL-STAGES OF SILICON MOLECULAR-BEAM EPITAXY

被引：15

作者：

HOEVEN, AJ

DIJKKAMP, D

LENSSINCK, JM

VANLOENEN, EJ

机构：

[1] Philips Research Laboratories, Eindhoven, P.O.Box 80.000

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 05期

关键词：

D O I：

10.1116/1.576519

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Initial stages of Si molecular beam epitaxy on vicinal Si (001) substrates were investigated using scanning tunneling microscopy. It was found that at temperatures around 750 K first a preferential growth of one type of terrace occurs, leading to the formation of a single-domain surface. During continued growth both step flow and nucleation of islands occur. Disordered areas can block the step flow and antiphase disorder offers preferential nucleation sites. © 1990, American Vacuum Society. All rights reserved.

引用

页码：3657 / 3661

页数：5

共 26 条

[1] AARTS J, 1986, APPL PHYS LETT, V48, P931, DOI 10.1063/1.96662
[2] INSITU RHEED OBSERVATION OF SELECTIVE DIMINUTION AT SI(001)-2 X-1 SUPERLATTICE SPOTS DURING MBE
AIZAKI, N
TATSUMI, T
[J]. SURFACE SCIENCE, 1986, 174 (1-3) : 658 - 665
[3] STABILITIES OF SINGLE-LAYER AND BILAYER STEPS ON SI(001) SURFACES
CHADI, DJ
[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (15) : 1691 - 1694
[4] THE USE OF PULSED LASER IRRADIATION IN SILICON MOLECULAR-BEAM EPITAXY - A COMPARATIVE LOW-ENERGY ELECTRON-DIFFRACTION STUDY
DEJONG, T
DOUMA, WAS
SMIT, L
KORABLEV, VV
SARIS, FW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 888 - 898
[5] A SIMPLIFIED SCANNING TUNNELING MICROSCOPE FOR SURFACE SCIENCE STUDIES
DEMUTH, JE
HAMERS, RJ
TROMP, RM
WELLAND, ME
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1320 - 1323
[6] MORPHOLOGY AND DISTRIBUTION OF ATOMIC STEPS ON SI(001) STUDIED WITH SCANNING TUNNELING MICROSCOPY
DIJKKAMP, D
HOEVEN, AJ
VANLOENEN, EJ
LENSSINCK, JM
DIELEMAN, J
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (01) : 39 - 41
[7] SCANNING TUNNELING MICROSCOPY STUDY OF SI(001) AND SI(110) SURFACE-STRUCTURES RESULTING FROM DIFFERENT THERMAL CLEANING TREATMENTS
DIJKKAMP, D
VANLOENEN, EJ
HOEVEN, AJ
DIELEMAN, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01): : 218 - 221
[8] DOI T, 1989, J CRYST GROWTH, V95, P468, DOI 10.1016/0022-0248(89)90444-2
[9] THE INFLUENCE OF SURFACE RECONSTRUCTION ON THE INITIAL-STAGES OF SILICON MOLECULAR-BEAM EPITAXY
GOSSMANN, HJ
FELDMAN, LC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1065 - 1066
[10] EPITAXIAL-GROWTH OF SILICON ON SI(001) BY SCANNING TUNNELING MICROSCOPY
HAMERS, RJ
KOHLER, UK
DEMUTH, JE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01): : 195 - 200

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