SCANNING TUNNELING MICROSCOPY STUDIES OF THE INITIAL-STAGES OF GERMANIUM GROWTH ON SI(001)

被引：10

作者：

MO, YW ^{[1
]}

LAGALLY, MG ^{[1
]}

机构：

[1] UNIV WISCONSIN,MADISON,WI 53706

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 14卷 / 03期

关键词：

D O I：

10.1016/0921-5107(92)90314-Y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth process of germanium on Si(001) has been investigated using scanning tunneling microscopy (STM) and a comprehensive picture of the major kinetic processes is obtained. A methodology based on STM analysis of denuded zones of adatom islands is developed to study the microscopic aspects of the growth kinetics. Surface diffusion of germanium on Si(001) is found to be anisotropic. The two types of monatomic step are shown to have different lateral sticking coefficients for germanium adatoms. No observable energy barrier exists at a S(B) monatomic step to prevent germanium adatoms from crossing downwards. The transition from two-dimensional (2D) to three-dimensional (3D) growth is found to occur via a kinetic pathway-a novel type of intermediate 3D cluster. The facets of these new 3D clusters are determined to be reconstructed {105} planes.

引用

页码：311 / 316

页数：6

共 25 条

[1] HETEROEPITAXIAL GROWTH OF GE FILMS ON THE SI(100)-2X1 SURFACE [J].