DISTRIBUTION OF RECOMBINATION COEFFICIENTS OF HOLE TRAPS IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON

被引：6

作者：

OHEDA, H

机构：

来源：

关键词：

D O I：

10.1063/1.339220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3803 / 3808

页数：6

共 15 条

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[12] RECOMBINATION IN A-SI-H - TRANSITIONS THROUGH DEFECT STATES [J].

STREET, RA ;

BIEGELSEN, DK ;

WEISFIELD, RL .

PHYSICAL REVIEW B, 1984, 30 (10) :5861-5870

STREET, RA ;

ZESCH, J ;

THOMPSON, MJ .

[14]

TIEDJE T, 1980, SOLID STATE COMMUN, V37, P49

WAKE, DR ;

AMER, NM .

PHYSICAL REVIEW B, 1983, 27 (04) :2598-2601