ANOMALOUS EFFECT OF CARRIERS ON DIELECTRIC-CONSTANT OF (IN, GA) (AS, P) LASERS OPERATING AT 1.3 MU-M WAVELENGTH

被引：9

作者：

TURLEY, SEH

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 14期

关键词：

D O I：

10.1049/el:19820405

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：590 / 592

页数：3

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[1] PHASE AND GROUP INDEXES FOR DOUBLE HETEROSTRUCTURE LASERS
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[2] GROWTH AND CHARACTERISTICS OF GALN ASP-INP DOUBLE HETEROSTRUCTURE LASERS
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[3] WAVELENGTH VARIATION OF 1.6 MU-M WAVELENGTH BURIED HETEROSTRUCTURE GAINASP INP LASERS DUE TO DIRECT MODULATION
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[4] MEASUREMENTS OF REFRACTIVE-INDEX VARIATION WITH FREE CARRIER DENSITY AND TEMPERATURE FOR 1.6-MU-M GAINASP-INP LASERS
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[J]. ELECTRONICS LETTERS, 1980, 16 (23) : 895 - 896
[5] EFFECT OF INJECTION CURRENT ON THE DIELECTRIC-CONSTANT OF AN INBUILT WAVEGUIDE IN TWIN-TRANSVERSE-JUNCTION STRIPE LASERS
TURLEY, SEH
THOMPSON, GHB
LOVELACE, DF
[J]. ELECTRONICS LETTERS, 1979, 15 (09) : 256 - 257
[6] LASING CHARACTERISTICS OF 1.5-1.6 MU-M GAINASP-INP INTEGRATED TWIN-GUIDE LASERS WITH 1ST-ORDER DISTRIBUTED BRAGG REFLECTORS
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 651 - 658