HIGH-POWER, HIGH-TEMPERATURE OPERATION OF GAINASSB-ALGAASSB RIDGE-WAVE-GUIDE LASERS EMITTING AT 1.9 MU-M

被引：11

作者：

CHOI, HK ^{[1
]}

TURNER, GW ^{[1
]}

CONNORS, MK ^{[1
]}

FOX, S ^{[1
]}

DAUGA, C ^{[1
]}

DAGENAIS, M ^{[1
]}

机构：

[1] UNIV MARYLAND,COLLEGE PK,MD 20742

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 03期

关键词：

D O I：

10.1109/68.372746

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ridge-waveguide lasers emitting at similar to 1.9 mu m have been fabricated from a multiple-quantum-well heterostructure with an active region consisting of five GaInAsSb wells and six AlGaAsSb barriers, At room temperature, single-ended cw output power as high as 100 mW has been obtained, The maximum cw operating temperature is 130 degrees C, with a characteristic temperature of 85 K between 20 and 80 degrees C.

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页码：281 / 283

页数：3

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