HIGH-TEMPERATURE STABILITY OF NICALON UNDER AR OR O-2 ATMOSPHERE

被引:37
作者
SHIMOO, T
CHEN, H
OKAMURA, K
机构
[1] Department of Metallurgy and Materials Science, College of Engineering, University of Osaka Prefecture, Osaka-fu, 593, Gakuen-cho, Sakai-shi
关键词
D O I
10.1007/BF01162506
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The thermal stability of Nicalon NL400 at 1573, 1673 and 1773 K has been studied by TGA and XRD. Under an Ar atmosphere, Nicalon pyrolysed severely to crystallize into beta-SiC involving the generation of both SiO and CO. Under an O-2 atmosphere, the oxide film which formed around Nicalon retarded the pyrolytic reaction of the core. Nicalon coated with a silica film by the previous oxidation treatment pyrolysed hardly at all under an Ar atmosphere, because the film restricted the escape of SiO and CO. Nicalon which was oxidation-treated at 1773 K retained 63% of its original strength after heating at 1773 K under an Ar atmosphere. The amorphous silica film was found to resist rapid thermal cycling between room temperature and elevated temperatures.
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页码:456 / 463
页数:8
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