ELECTRON AND HOLE CARRIER MOBILITIES FOR LIQUID-PHASE EPITAXIALLY GROWN GAP IN THE TEMPERATURE-RANGE 200-K-550-K

被引:31
作者
KAO, YC
EKNOYAN, O
机构
关键词
D O I
10.1063/1.332362
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2468 / 2471
页数:4
相关论文
共 15 条
[1]  
BERGH AA, 1976, LIGHT EMITTING DIODE, pCH6
[2]   VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP [J].
CASEY, HC ;
ERMANIS, F ;
WOLFSTIRN, KB .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) :2945-+
[3]   ELECTRON SCATTERING MECHANISMS IN N-TYPE EPITAXIAL CAP [J].
EPSTEIN, AS .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) :1611-&
[4]   SINGLE-STEP OPTICAL LIFT-OFF PROCESS [J].
HATZAKIS, M ;
CANAVELLO, BJ ;
SHAW, JM .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (04) :452-460
[5]  
Johannson N. G. E., 1970, SOLID STATE ELECTRON, V13, P317, DOI 10.1016/0038-1101(70)90183-8
[6]  
KAO YT, UNPUB
[7]  
MCKELVEY JP, 1966, SOLID STATE SEMICOND, P457
[9]   RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J].
SZE, SM ;
IRVIN, JC .
SOLID-STATE ELECTRONICS, 1968, 11 (06) :599-&
[10]  
SZE SM, 1981, PHYS SEMICONDUCTOR D, P28