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REDUCED DISLOCATION DENSITIES IN LIQUID PHASE EPITAXY LAYERS BY INTERMITTENT GROWTH
被引:25
作者
:
SAUL, RH
论文数:
0
引用数:
0
h-index:
0
SAUL, RH
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1971年
/ 118卷
/ 05期
关键词
:
D O I
:
10.1149/1.2408166
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:793 / &
相关论文
共 13 条
[1]
HINKLEY DE, 1964, APPL PHYS LETT, V5, P110
[2]
DISLOCATIONS IN THE DIAMOND LATTICE
HORNSTRA, J
论文数:
0
引用数:
0
h-index:
0
HORNSTRA, J
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1958,
5
(1-2)
: 129
-
141
[3]
COMPARISON OF LIQUID-ENCAPSULATED AND SOLUTION-GROWN SUBSTRATES FOR EFFICIENT GAP DIODES
LADANY, I
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
LADANY, I
MCFARLANE, SH
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
MCFARLANE, SH
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
BASS, SJ
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(12)
: 4984
-
+
[4]
PREPARATION AND PROPERTIES OF SOLUTION-GROWN EPITAXIAL P-N JUNCTIONS IN GAP
LORENZ, MR
论文数:
0
引用数:
0
h-index:
0
LORENZ, MR
PILKUHN, M
论文数:
0
引用数:
0
h-index:
0
PILKUHN, M
[J].
JOURNAL OF APPLIED PHYSICS,
1966,
37
(11)
: 4094
-
&
[5]
CRYSTAL GROWTH OF GAAS FROM GA BY A TRAVELING SOLVENT METHOD
MLAVSKY, AI
论文数:
0
引用数:
0
h-index:
0
MLAVSKY, AI
WEINSTEIN, M
论文数:
0
引用数:
0
h-index:
0
WEINSTEIN, M
[J].
JOURNAL OF APPLIED PHYSICS,
1963,
34
(09)
: 2885
-
&
[6]
EFFECTS OF BACK-MELTING ON DISLOCATION DENSITY IN SINGLE CRYSTALS - GASB
MROCZKOWSKI, RS
论文数:
0
引用数:
0
h-index:
0
MROCZKOWSKI, RS
WITT, AF
论文数:
0
引用数:
0
h-index:
0
WITT, AF
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
GATOS, HC
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(05)
: 545
-
+
[7]
NELSON H, 1963, RCA REV, V24, P603
[8]
REFLECTION X-RAY TOPOGRAPHY OF GAAS AND GAP CLEAVAGE FACES
ROZGONYI, GA
论文数:
0
引用数:
0
h-index:
0
ROZGONYI, GA
HASZKO, SE
论文数:
0
引用数:
0
h-index:
0
HASZKO, SE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(12)
: 1562
-
&
[9]
DEFECT STRUCTURE OF GAP CRYSTALS GROWN FROM GALLIUM SOLUTIONS VAPOR PHASE AND LIQUID PHASE EPITAXIAL DEPOSITION
SAUL, RH
论文数:
0
引用数:
0
h-index:
0
SAUL, RH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(11)
: 1184
-
&
[10]
DISTRIBUTION OF IMPURITIES IN ZN, O-DOPED GAP LIQUID PHASE EPITAXY LAYERS
SAUL, RH
论文数:
0
引用数:
0
h-index:
0
SAUL, RH
HACKETT, WH
论文数:
0
引用数:
0
h-index:
0
HACKETT, WH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(07)
: 921
-
&
←
1
2
→
共 13 条
[1]
HINKLEY DE, 1964, APPL PHYS LETT, V5, P110
[2]
DISLOCATIONS IN THE DIAMOND LATTICE
HORNSTRA, J
论文数:
0
引用数:
0
h-index:
0
HORNSTRA, J
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1958,
5
(1-2)
: 129
-
141
[3]
COMPARISON OF LIQUID-ENCAPSULATED AND SOLUTION-GROWN SUBSTRATES FOR EFFICIENT GAP DIODES
LADANY, I
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
LADANY, I
MCFARLANE, SH
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
MCFARLANE, SH
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
BASS, SJ
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(12)
: 4984
-
+
[4]
PREPARATION AND PROPERTIES OF SOLUTION-GROWN EPITAXIAL P-N JUNCTIONS IN GAP
LORENZ, MR
论文数:
0
引用数:
0
h-index:
0
LORENZ, MR
PILKUHN, M
论文数:
0
引用数:
0
h-index:
0
PILKUHN, M
[J].
JOURNAL OF APPLIED PHYSICS,
1966,
37
(11)
: 4094
-
&
[5]
CRYSTAL GROWTH OF GAAS FROM GA BY A TRAVELING SOLVENT METHOD
MLAVSKY, AI
论文数:
0
引用数:
0
h-index:
0
MLAVSKY, AI
WEINSTEIN, M
论文数:
0
引用数:
0
h-index:
0
WEINSTEIN, M
[J].
JOURNAL OF APPLIED PHYSICS,
1963,
34
(09)
: 2885
-
&
[6]
EFFECTS OF BACK-MELTING ON DISLOCATION DENSITY IN SINGLE CRYSTALS - GASB
MROCZKOWSKI, RS
论文数:
0
引用数:
0
h-index:
0
MROCZKOWSKI, RS
WITT, AF
论文数:
0
引用数:
0
h-index:
0
WITT, AF
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
GATOS, HC
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(05)
: 545
-
+
[7]
NELSON H, 1963, RCA REV, V24, P603
[8]
REFLECTION X-RAY TOPOGRAPHY OF GAAS AND GAP CLEAVAGE FACES
ROZGONYI, GA
论文数:
0
引用数:
0
h-index:
0
ROZGONYI, GA
HASZKO, SE
论文数:
0
引用数:
0
h-index:
0
HASZKO, SE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(12)
: 1562
-
&
[9]
DEFECT STRUCTURE OF GAP CRYSTALS GROWN FROM GALLIUM SOLUTIONS VAPOR PHASE AND LIQUID PHASE EPITAXIAL DEPOSITION
SAUL, RH
论文数:
0
引用数:
0
h-index:
0
SAUL, RH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(11)
: 1184
-
&
[10]
DISTRIBUTION OF IMPURITIES IN ZN, O-DOPED GAP LIQUID PHASE EPITAXY LAYERS
SAUL, RH
论文数:
0
引用数:
0
h-index:
0
SAUL, RH
HACKETT, WH
论文数:
0
引用数:
0
h-index:
0
HACKETT, WH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1970,
117
(07)
: 921
-
&
←
1
2
→