AN INVESTIGATION OF THE THERMAL-STABILITY OF THE INTERFACIAL OXIDE IN POLYCRYSTALLINE SILICON EMITTER BIPOLAR-TRANSISTORS BY COMPARING DEVICE RESULTS WITH HIGH-RESOLUTION ELECTRON-MICROSCOPY OBSERVATIONS

被引：149

作者：

WOLSTENHOLME, GR ^{[1
]}

JORGENSEN, N ^{[1
]}

ASHBURN, P ^{[1
]}

BOOKER, GR ^{[1
]}

机构：

[1] UNIV OXFORD, DEPT MET & SCI MAT, OXFORD, ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 01期

关键词：

D O I：

10.1063/1.338861

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：225 / 233

页数：9

相关论文

共 28 条

[1] ALBUYARON A, 1984, 8TH P EUR C EL MICR, V1, P521
[2] ALBUYARON A, 1984, UNPUB BRIT ASS CRYST
[3] COMPARISON OF EXPERIMENTAL AND THEORETICAL RESULTS ON POLYSILICON EMITTER BIPOLAR-TRANSISTORS
ASHBURN, P
SOEROWIRDJO, B
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (07) : 853 - 860
[4] ARSENIC PROFILES IN BIPOLAR-TRANSISTORS WITH POLYSILICON EMITTERS
ASHBURN, P
SOEROWIRDJO, B
[J]. SOLID-STATE ELECTRONICS, 1981, 24 (05) : 475 - 476
[5] EMITTER RESISTANCE OF ARSENIC-DOPED AND PHOSPHORUS-DOPED POLYSILICON EMITTER TRANSISTORS
CHOR, EF
ASHBURN, P
BRUNNSCHWEILER, A
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) : 516 - 518
[6] Cuthbertson A., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P749
[7] SIS TUNNEL EMITTER - THEORY FOR EMITTERS WITH THIN INTERFACE LAYERS
DEGRAAFF, HC
DEGROOT, JG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1771 - 1776
[8] DUFFILL JE, 1982, 12TH P EUR SOL STAT
[9] THE ROLE OF THE INTERFACIAL LAYER IN POLYSILICON EMITTER BIPOLAR-TRANSISTORS
ELTOUKHY, AA
ROULSTON, DJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) : 1862 - 1869
[10] ELTOUKHY AA, 1982, IEEE T ELECTRON DEV, V29, P961, DOI 10.1109/T-ED.1982.20814