COMPUTATIONAL INVESTIGATION OF RHEED INTENSITY EVOLUTIONS DURING GROWTH BY MBE

被引:20
作者
CLARKE, S
VVEDENSKY, DD
机构
关键词
D O I
10.1016/S0039-6028(87)80546-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:1033 / 1040
页数:8
相关论文
共 8 条
[1]  
CLARKE SW, IN PRESS
[2]  
HEAVE JH, 1983, APPL PHYS LETT, V47, P100
[3]  
Heinz T., 1995, LOW ENERGY ELECTRON, V14, P1421
[4]   QUANTITATIVE-EVALUATION OF RANDOM DISTRIBUTED STEPS AT INTERFACES AND SURFACES [J].
HENZLER, M .
SURFACE SCIENCE, 1978, 73 (01) :240-251
[5]   RHEED STUDIES OF HETEROJUNCTION AND QUANTUM-WELL FORMATION DURING MBE GROWTH - FROM MULTIPLE-SCATTERING TO BAND OFFSETS [J].
JOYCE, BA ;
DOBSON, PJ ;
NEAVE, JH ;
WOODBRIDGE, K ;
ZHANG, J ;
LARSEN, PK ;
BOLGER, B .
SURFACE SCIENCE, 1986, 168 (1-3) :423-438
[6]  
JOYCE BA, COMMUNICATION
[7]  
PLOOG K, 1980, CRYSTALS GROWTH PROP, P73
[8]   DAMPED OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAAS MBE [J].
VANHOVE, JM ;
LENT, CS ;
PUKITE, PR ;
COHEN, PI .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :741-746