BEHAVIOR OF OXYGEN IN THE CRYSTAL-FORMATION AND HEAT-TREATMENT OF SILICON HEAVILY DOPED WITH ANTIMONY

被引：16

作者：

NOZAKI, T ^{[1
]}

ITOH, Y ^{[1
]}

MASUI, T ^{[1
]}

ABE, T ^{[1
]}

机构：

[1] SHINETSU SEMICOND CO LTD,ANNAKA 37901,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 07期

关键词：

D O I：

10.1063/1.337005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2562 / 2565

页数：4

共 11 条

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