GEOMETRIC STRUCTURE AT THE SI/GAAS(001) INTERFACE - THE RELATIONSHIP TO ALAS/SI/GAAS BAND OFFSETS

被引：12

作者：

CHAMBERS, SA

TRAN, TT

机构：

[1] Pacific Northwest Laboratory, MS K2-12, Richland, WA 99352

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.47.13023

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have used high-energy x-ray photoelectron diffraction to investigate the structure of the first monolayer of epitaxial Si on GaAs(001)-(2 X 4). Analysis reveals that Si indiffusion occurs, resulting in Si occupancies of approximately 0.6, 0.3, and 0.1 in the first, second, and third layers, respectively. In addition, Si atoms are displaced from their respective bulk truncated coordinates by 0.5+/-0.1 angstrom along [110] in the first layer, and by 0.4+/-0.1 angstrom along [110BAR] in the second layer. These results provide an explanation for the unusual band-offset behavior at AlAs/Si/GaAs heterojunctions.

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页码：13023 / 13026

页数：4

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