A NEW APPARATUS FOR PHOTON-BEAM-ASSISTED AND ION-BEAM-ASSISTED DEPOSITION

被引:16
作者
WENGENMAIR, H [1 ]
STRITZKER, B [1 ]
RAUSCHENBACH, B [1 ]
机构
[1] UNIV AUGSBURG,INST PHYS,D-86135 AUGSBURG,GERMANY
关键词
D O I
10.1063/1.1146050
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Over the last decade ion-beam-assisted deposition (IBAD) has become a well-known technique for deposition of thin films because of its ability to control properties of coatings. A new IBAD system is introduced which includes a facility to illuminate samples by UV light during the deposition process in order to enhance motion of deposited atoms and interfacial reactions between substrate and coating. The IBAD system consists of two vacuum chambers, the preparation chamber and the analysis chamber, which are connected by a straight tube for sample transfer. Samples may be moved through the tube between the two chambers by a linear feedthrough. The preparation chamber includes a filamentless rf ion source, an electron-beam evaporator, and a tube with a nozzle delivering reactive gases near the sample during deposition. In addition to the ion-assisted deposition process, a technique based on photon irradiation has been employed to obtain significant improvements of structure and properties of deposited metal layers. As these films reflect a large fraction of light in the visible range, we use UV-light illumination. The samples are irradiated by UV light with a mercury arc lamp during deposition. To achieve the high degree of process automation most process parameters are controlled with a computer system. The analysis chamber includes a reverse view LEED/AES system, which is used to analyze composition and surface structure of thin the films. © 1995 American Institute of Physics.
引用
收藏
页码:1083 / 1085
页数:3
相关论文
共 11 条
[1]  
Itoh, 1989, ION BEAM ASSISTED FI, P289
[2]   MOLECULAR-BEAM EPITAXY - RECENT TRENDS AND FUTURE-DEVELOPMENTS [J].
JOYCE, BA .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1988, 49 (03) :237-242
[3]  
LUT H, 1992, SPRINGER SERIES SURF, V15
[4]   AN APPARATUS FOR COMBINED VAPOR-DEPOSITION AND ION-IMPLANTATION TO MODIFY THE SURFACE-PROPERTIES OF METALS [J].
MARGESIN, B ;
GIACOMOZZI, F ;
GUZMAN, L ;
LAZZARI, G ;
ZANINI, V .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :566-569
[5]   PARTICLE BOMBARDMENT EFFECTS ON THIN-FILM DEPOSITION - A REVIEW [J].
MATTOX, DM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :1105-1114
[6]  
MIN K, 1993, TECHNOL REP OSAKA U, V43, P175
[7]   FILM MODIFICATION BY LOW-ENERGY ION-BOMBARDMENT DURING DEPOSITION [J].
ROSSNAGEL, SM ;
CUOMO, JJ .
THIN SOLID FILMS, 1989, 171 (01) :143-156
[8]   PROPERTIES AND MICROSTRUCTURE OF TUNGSTEN FILMS DEPOSITED BY ION-ASSISTED EVAPORATION [J].
ROY, RA ;
PETKIE, R ;
BOULDING, A .
JOURNAL OF MATERIALS RESEARCH, 1991, 6 (01) :80-91
[9]   USE OF ION-BEAM ASSISTED DEPOSITION TO MODIFY THE MICROSTRUCTURE AND PROPERTIES OF THIN-FILMS [J].
SMIDT, FA .
INTERNATIONAL MATERIALS REVIEWS, 1990, 35 (02) :61-128
[10]  
WENGEMAIR H, IN PRESS METHODS B