ELECTRONIC-STRUCTURE OF THE QUATERNARY ALLOY GAXIN1-XASYP1-Y

被引：5

作者：

ABID, H

BADI, N

DRIZ, M

BOUARISSA, N

BENKABOU, KH

KHELIFA, B

AOURAG, H

机构：

[1] Computational Materials Science Laboratory, Physics Department, University of Sidi-Bel-Abbès

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 33卷 / 2-3期

关键词：

ALLOY; BOND STRUCTURE CALCULATIONS; SEMICONDUCTOR; ELECTRON;

D O I：

10.1016/0921-5107(94)01172-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A method for calculating the electronic structure of the quaternary alloy GaxIn1-xAsyP1-y is presented. We have used the empirical pseudopotential method coupled with the virtual crystal approximation, which incorporates the compositional disorder as an effective potential. The electronic structure are studied for GaxIn1-xAsyP1-x(x = 0.5; y = 0.5) and GaxIn1-xAsyP1-y lattice matched to InP as well as GaAs. Good agreement with experiment is obtained for the calculated values of the direct energy gap and the bowing parameter at the Gamma point of the InP-lattice-matched quaternary alloy.

引用

页码：133 / 139

页数：7

共 27 条

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