EVALUATION OF SUBSTRATES FOR GROWTH OF HGCDTE BY MOLECULAR-BEAM EPITAXY

被引:7
作者
DINAN, JH [1 ]
QADRI, SB [1 ]
机构
[1] USN,RES LAB,WASHINGTON,DC 20375
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 04期
关键词
D O I
10.1116/1.574047
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:2158 / 2161
页数:4
相关论文
共 16 条
[1]   CRYSTAL-GROWTH OF CD1-XZNXTE AND ITS USE AS A SUPERIOR SUBSTRATE FOR LPE GROWTH OF HG0.8CD0.2TE [J].
BELL, SL ;
SEN, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :112-115
[2]   GROWTH OF CDTE-FILMS ON ALTERNATIVE SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].
BICKNELL, RN ;
MYERS, TH ;
SCHETZINA, JF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :423-426
[3]  
BOOYENS H, 1984, PHYS STATUS SOLIDI A, V85, P449, DOI 10.1002/pssa.2210850216
[4]   HETEROEPITAXIAL GROWTH OF ZNCDTE BY MOLECULAR-BEAM EPITAXY [J].
DINAN, JH ;
QADRI, SB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :851-854
[5]   A STUDY OF THE GROWTH-CONDITIONS NECESSARY FOR REPRODUCIBLE PREPARATION OF HIGH PERFECTION CDTE-FILMS ON INSB BY MBE [J].
FARROW, RFC ;
WOOD, S ;
GREGGI, JC ;
TAKEI, WJ ;
SHIRLAND, FA ;
FURNEAUX, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :681-682
[6]   PHOTOLUMINESCENCE OF CDTE - A COMPARISON OF BULK AND EPITAXIAL MATERIAL [J].
GILESTAYLOR, NC ;
BICKNELL, RN ;
BLANKS, DK ;
MYERS, TH ;
SCHETZINA, JF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :76-82
[7]   PHOTOLUMINESCENCE AT DISLOCATION IN GAAS [J].
HEINKE, W ;
QUEISSER, HJ .
PHYSICAL REVIEW LETTERS, 1974, 33 (18) :1082-1084
[8]  
IVANOV VA, 1982, FIZ TVERD TELA LENIN, V24, P754
[9]   GROWTH AND PROPERTIES OF HG1-XCDXTE EPITAXIAL LAYERS [J].
NEMIROVSKY, Y ;
MARGALIT, S ;
FINKMAN, E ;
SHACHAMDIAMAND, Y ;
KIDRON, I .
JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) :133-153
[10]   MOLECULAR-BEAM EPITAXY OF CDTE AND HG1-XCDXTE ON GAAS (100) [J].
NISHITANI, K ;
OHKATA, R ;
MUROTANI, T .
JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (03) :619-635