INVESTIGATION OF BORON-DIFFUSION FROM POLYCRYSTALLINE SILICON

被引：30

作者：

GARBEN, B ^{[1
]}

ORRARIENZO, WA ^{[1
]}

LEVER, RF ^{[1
]}

机构：

[1] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 10期

关键词：

D O I：

10.1149/1.2108359

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2152 / 2156

页数：5

共 17 条

[1]

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[2]

ASBURN P, 1981, SOLID STATE ELECTRON, V24, P475

[3]

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[4] BORON-DIFFUSION IN SILICON-CONCENTRATION AND ORIENTATION DEPENDENCE, BACKGROUND EFFECTS, AND PROFILE ESTIMATION [J].

FAIR, RB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (06) :800-805

[5]

FAIR RB, 1981, SILICON INTEGRATED C, P55

[6]

GARBEN B, UNPUB

[7] A SIMPLE-MODEL FOR THE DEPOSITION OF BORON IN SILICON BY USING A BN DIFFUSION SOURCE [J].

GUO, SF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) :2506-2509

[8]

Hofker W. K., 1973, Applied Physics, V2, P265, DOI 10.1007/BF00889509

[9] EFFECTIVENESS OF POLYCRYSTALLINE SILICON DIFFUSION SOURCES [J].

JOSQUIN, WJMJ ;

BOUDEWIJN, PR ;

TAMMINGA, Y .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :960-962

[10] BOLTZMANN-MATANO ANALYSIS OF BORON PROFILES IN SILICON [J].

KIM, C ;

ZHU, ZY ;

KANG, RI ;

SHONO, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) :2962-2964

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