A SIMPLE-MODEL FOR THE DEPOSITION OF BORON IN SILICON BY USING A BN DIFFUSION SOURCE

被引：8

作者：

GUO, SF

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 11期

关键词：

D O I：

10.1149/1.2129504

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2506 / 2509

页数：4

共 17 条

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[3]

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[4]

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FAIR RB, 1977, SEMICONDUCTOR SILICO, P968

[9] SI-SIO2 INTERFACE OXIDATION-KINETICS - PHYSICAL MODEL FOR THE INFLUENCE OF HIGH SUBSTRATE DOPING LEVELS .1. THEORY [J].

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