EVALUATION OF THE INTERNAL QUANTUM EFFICIENCY AND SATURATION CURRENT OF HEAVILY DOPED EMITTERS

被引：6

作者：

DONOLATO, C

机构：

[1] Consiglio Nazionale delle Ricerche, Istituto LAMEL

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 04期

关键词：

D O I：

10.1109/16.52457

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new procedure is described for analytically calculating the distribution of the charge-collection probability and hence the internal quantum efficiency and saturation current of heavily doped emitters. The method relies on a multilayer approximation that can be treated with the transfer matrix method and holds for arbitrary dependence on the depth of the dopant concentration, minority-carrier diffusion coefficient, and lifetime, and for any value of the surface recombination velocity. © 1990 IEEE

引用

页码：1165 / 1167

页数：3

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