PARAMAGNETIC-RESONANCE IN GAN-BASED LIGHT-EMITTING-DIODES

被引：16

作者：

CARLOS, WE ^{[1
]}

GLASER, ER ^{[1
]}

KENNEDY, TA ^{[1
]}

NAKAMURA, S ^{[1
]}

机构：

[1] NICHIA CHEM IND LTD,TOKUSHIMA 774,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 16期

关键词：

D O I：

10.1063/1.114350

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Significant advances in GaN-based materials and devices have prompted intense interest in the group III nitrides. In this letter, we report electroluminescence-detected magnetic resonance (ELDMR) and electrically detected magnetic resonance (EDMR) results on InGaN/AlGaN double heterostructures which have an intense blue emission. The dominant feature detected by either technique is a broad resonance (Delta B similar to 21 mT) at g approximate to 2.00. Our ELDMR measurements show that this is associated with the blue emission and we ascribe this resonance signal to a deep Zn-related acceptor. A second resonance, resolved in EDMR, is tentatively identified as a deep donor trap. Based on our results we propose a model for the blue emission from these diodes. (C) 1995 American Institute of Physics.

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页码：2376 / 2378

页数：3

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