ELECTROREFLECTANCE AT THE SEMICONDUCTOR ELECTROLYTE INTERFACE - A COMPARISON OF THEORY AND EXPERIMENT FOR N-GAAS

被引：15

作者：

ABRANTES, LM

PEAT, R

PETER, LM

HAMNETT, A

机构：

[1] UNIV SOUTHAMPTON,DEPT CHEM,SOUTHAMPTON SO9 5NH,HANTS,ENGLAND

[2] INORGAN CHEM LAB,OXFORD OX1 3QR,ENGLAND

来源：

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 1987年 / 91卷 / 04期

关键词：

D O I：

10.1002/bbpc.19870910426

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：369 / 374

页数：6

共 19 条

[1] ABRANTES LM, UNPUB
[2] Aspnes D., 1972, SEMICONDUCT SEMIMET, V9, P457
[3] Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109
[4] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE
ASPNES, DE
[J]. SURFACE SCIENCE, 1973, 37 (01) : 418 - 442
[5] ASPNES DE, 1968, PHYS REV, V166, P961
[6] CALLOWAY J, 1974, QUANTUM THEORY SOLID
[7] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE
CARDONA, M
SHAKLEE, KL
POLLAK, FH
[J]. PHYSICAL REVIEW, 1967, 154 (03): : 696 - +
[8] Cardona M., 1969, MODULATION SPECTROSC
[9] FRANZ W, 1958, Z NATURFORSCH PT A, V13, P484
[10] HAMNETT A, IN PRESS COMP CHEM K, V29