ELECTROREFLECTANCE AT THE SEMICONDUCTOR ELECTROLYTE INTERFACE - A COMPARISON OF THEORY AND EXPERIMENT FOR N-GAAS

被引：15

作者：

ABRANTES, LM

PEAT, R

PETER, LM

HAMNETT, A

机构：

[1] UNIV SOUTHAMPTON,DEPT CHEM,SOUTHAMPTON SO9 5NH,HANTS,ENGLAND

[2] INORGAN CHEM LAB,OXFORD OX1 3QR,ENGLAND

来源：

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 1987年 / 91卷 / 04期

关键词：

D O I：

10.1002/bbpc.19870910426

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：369 / 374

页数：6

共 19 条

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[16] OPTICAL INVESTIGATION OF THE ELECTRICAL-PROPERTIES OF A POLYCRYSTALLINE-SEMICONDUCTOR-ELECTROLYTE INTERFACE USING ELECTROREFLECTANCE
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 406 - 410
[17] TOMKIEWICZ M, 1984, J ELECTROCHEM SOC, V131, P736, DOI 10.1149/1.2115690
[18] TOMKIEWICZ M, 1981, PHOTOEFFECTS SEMICON, P267
[19] VARIATIONS IN STOICHIOMETRY IN HG1-XCDXTE USING ELECTROLYTE ELECTROREFLECTANCE - TOPOGRAPHICAL INVESTIGATION
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RACCAH, PM
[J]. APPLIED OPTICS, 1977, 16 (11): : 2858 - 2860

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