LOW-TEMPERATURE LEED AND ELECTRIC-CONDUCTIVITY MEASUREMENTS FOR CLEAVED SI(111) SURFACES

被引：13

作者：

ARISTOV, VY

BATOV, IE

GRAZHULIS, VA

机构：

来源：

SURFACE SCIENCE | 1983年 / 132卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(83)90532-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：73 / 81

页数：9

共 29 条

[1]

Aristov V. Yu., 1981, Pis'ma v Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V34, P335

[2] STRUCTURE OF GE(111) SURFACES OBTAINED BY CLEAVAGE IN SUPERHIGH VACUUM AT LOW-TEMPERATURES [J].

ARISTOV, VY ;

GOLOVKO, NI ;

GRAZHULIS, VA ;

OSSIPYAN, YA ;

TALYANSKII, VI .

SURFACE SCIENCE, 1982, 117 (1-3) :204-207

[3]

ARISTOV VY, 1981, ECOSS4

[4]

ARISTOV VY, 1981, VSESOYUZNAYA SHKOLA, P3

[5] SURFACE STATES ON CLEAVED (111) SILICON SURFACES [J].

ASPNES, DE ;

HANDLER, P .

SURFACE SCIENCE, 1966, 4 (04) :353-&

[6] OPTICAL-PROPERTIES OF DANGLING-BOND STATES AT CLEAVED SILICON SURFACES [J].

ASSMANN, J ;

MONCH, W .

SURFACE SCIENCE, 1980, 99 (01) :34-44

[7]

Auer P.P., 1974, JAPAN J APPL PHYS 2, V2, P397

[8]

BATOV IE, 1982, THESIS I SOLID STATE

[9]

CHADI DJ, UNPUB

[10] OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI [J].

CHIAROTTI, G ;

NANNARONE, S ;

PASTORE, R ;

CHIARADIA, P .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10) :3398-+

← 1 2 3 →