ATOMIC LAYER EPITAXY OF GAINP ORDERED ALLOY

被引：62

作者：

MCDERMOTT, BT

REID, KG

ELMASRY, NA

BEDAIR, SM

DUNCAN, WM

YIN, X

POLLAK, FH

机构：

[1] TEXAS INSTRUMENTS INC, DALLAS, TX 75265 USA

[2] CUNY BROOKLYN COLL, DEPT PHYS, BROOKLYN, NY 11210 USA

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 12期

关键词：

D O I：

10.1063/1.102553

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the successful growth of ordered GaInP by atomic layer epitaxy on a GaAs substrate. The growth was achieved by alternate exposures to TEI, PH3, TMGa, and PH3 fluxes, and epilayers were found to closely match the GaAs substrate irrespective of the growth conditions. Room-temperature photoreflectance results indicate a band gap of 1.78 eV, the lowest value yet reported for such ordered alloys. Photoluminescence shows an anomalous temperature dependence behavior and transmission electron microscopy studies indicate that ordering takes place preferentially on (111) alternating planes.

引用

页码：1172 / 1174

页数：3

共 19 条

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