THE NATURE OF THE MIDGAP DEFECT TRANSITION IN INTRINSIC A-SI-H AS DEDUCED BY DEPLETION WIDTH MODULATION ELECTRON-SPIN RESONANCE

被引：2

作者：

ESSICK, JM

COHEN, JD

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷

关键词：

D O I：

10.1016/0022-3093(89)90609-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：435 / 437

页数：3

共 8 条

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[2]

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[5] DRIVE-LEVEL CAPACITANCE PROFILING - ITS APPLICATION TO DETERMINING GAP STATE DENSITIES IN HYDROGENATED AMORPHOUS-SILICON FILMS [J].

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[6]

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[7] LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON - A SYSTEMATIC STUDY [J].

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[8]

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