ATOMIC-SCALE SIMULATION OF SILICON ETCHED IN AQUEOUS KOH SOLUTION

被引：20

作者：

CAMON, H

MOKTADIR, Z

机构：

[1] LAAS/CNRS, Toulouse, 31077

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1995年 / 46卷 / 1-3期

关键词：

SILICON; ETCHING; ROUGHNESS; MONTE CARLO SIMULATION;

D O I：

10.1016/0924-4247(94)00854-B

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present the theoretical bases of an atomic scale model and the Monte Carlo implementation. We present results for [hk0] oriented surfaces like etching rates, and more detailed results for low-index surfaces such as [100] and [111]. For these two directions we will present results concerning the surface morphology and the time evolution of the roughness.

引用

页码：27 / 29

页数：3

共 7 条

[1]

BUSER RA, 1990, NOV P MME 90 WORKSH, P7

[2] MODELING OF ANISOTROPIC ETCHING IN SILICON-BASED SENSOR APPLICATION [J].