TECHNOLOGY CHALLENGES FOR ULTRA-SMALL SILICON MOSFETS

被引：14

作者：

DENNARD, RH

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571121

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：537 / 539

页数：3

共 20 条

[1]

BARBE DF, 1980, DEC TECH DIG INT EL, P20

[2] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].

CROWDER, BL ;

ZIRINSKY, S .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :291-293

[3] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].

DENNARD, RH ;

GAENSSLEN, FH ;

YU, HN ;

RIDEOUT, VL ;

BASSOUS, E ;

LEBLANC, AR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268

[4] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J].

DERBENWICK, GF ;

GREGORY, BL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2151-2156

[5]

FICHTNER W, 1980, DEC TECH DIG INT EL, P24

[6] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J].

GAENSSLEN, FH ;

RIDEOUT, VL ;

WALKER, EJ ;

WALKER, JJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :218-229

[7]

HAYASHI Y, 1975, ELECTRON LETT, V11, P618, DOI 10.1049/el:19750471

[8]

HSIEH CM, 1980, ECS EXT ABSTR, V80, P1408

[9]

ITO T, 1980, ISSCC, P74

[10] EFFECT OF RANDOMNESS IN DISTRIBUTION OF IMPURITY IONS ON FET THRESHOLDS IN INTEGRATED ELECTRONICS [J].

KEYES, RW .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (04) :245-247

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