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PHOTOVOLTAIC PROPERTIES OF A CARBON-FILM SILICON HETEROJUNCTION
被引:8
作者
:
FANG, PH
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, Boston College, Chestnut Hill
FANG, PH
TAKEUCHI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, Boston College, Chestnut Hill
TAKEUCHI, T
CHEN, EY
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, Boston College, Chestnut Hill
CHEN, EY
机构
:
[1]
Department of Physics, Boston College, Chestnut Hill
来源
:
SOLAR CELLS
|
1990年
/ 28卷
/ 04期
关键词
:
D O I
:
10.1016/0379-6787(90)90066-E
中图分类号
:
TE [石油、天然气工业];
TK [能源与动力工程];
学科分类号
:
0807 ;
0820 ;
摘要
:
Carbon film deposited by glow discharge decomposition of methane on a silicon crystal substrate shows a fine crystalline diamond structure with a minor graphitic component and p-type conductivity. A highly sensitive photovoltaic response to weak light has been observed in this system and is reported here. © 1990.
引用
收藏
页码:315 / 318
页数:4
相关论文
共 8 条
[1]
CRYSTALLIZATION OF DIAMOND CRYSTALS AND FILMS BY MICROWAVE ASSISTED CVD .2.
[J].
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h-index:
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BADZIAN, AR
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BADZIAN, T
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0
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0
BADZIAN, T
;
ROY, R
论文数:
0
引用数:
0
h-index:
0
ROY, R
;
MESSIER, R
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0
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MESSIER, R
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SPEAR, KE
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0
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MATERIALS RESEARCH BULLETIN,
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APPARATUS FOR LOW-TEMPERATURE GROWTH OF DIAMOND-CONTAINING FILMS
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0
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KINNIER, JH
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JOURNAL OF MATERIALS RESEARCH,
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COMBINED MICRO-CRYSTAL AND AMORPHOUS-SILICON CELLS
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SCHUBERT, CC
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SCHUBERT, CC
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KINNIER, JH
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PANG, D
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机构:
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GROT, SA
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机构:
PENN STATE UNIV,DEPT ELECT ENGN,UNIVERSITY PK,PA 16802
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MESSIER, R
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PENN STATE UNIV,DEPT ELECT ENGN,UNIVERSITY PK,PA 16802
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C-V CHARACTERISTICS OF SCHOTTKY BARRIERS ON LABORATORY GROWN SEMICONDUCTING DIAMONDS
[J].
GLOVER, GH
论文数:
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引用数:
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h-index:
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机构:
GE, RES & DEV CTR, SCHENECTADY, NY 12301 USA
GE, RES & DEV CTR, SCHENECTADY, NY 12301 USA
GLOVER, GH
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[7]
SZE SM, 1969, PHYSICS SEMICONDUCTO, P72
[8]
YAN ZC, COMMUNICATION
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1
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共 8 条
[1]
CRYSTALLIZATION OF DIAMOND CRYSTALS AND FILMS BY MICROWAVE ASSISTED CVD .2.
[J].
BADZIAN, AR
论文数:
0
引用数:
0
h-index:
0
BADZIAN, AR
;
BADZIAN, T
论文数:
0
引用数:
0
h-index:
0
BADZIAN, T
;
ROY, R
论文数:
0
引用数:
0
h-index:
0
ROY, R
;
MESSIER, R
论文数:
0
引用数:
0
h-index:
0
MESSIER, R
;
SPEAR, KE
论文数:
0
引用数:
0
h-index:
0
SPEAR, KE
.
MATERIALS RESEARCH BULLETIN,
1988,
23
(04)
:531
-548
[2]
APPARATUS FOR LOW-TEMPERATURE GROWTH OF DIAMOND-CONTAINING FILMS
[J].
FANG, PH
论文数:
0
引用数:
0
h-index:
0
FANG, PH
;
KINNIER, JH
论文数:
0
引用数:
0
h-index:
0
KINNIER, JH
.
JOURNAL OF MATERIALS RESEARCH,
1989,
4
(05)
:1243
-1245
[3]
COMBINED MICRO-CRYSTAL AND AMORPHOUS-SILICON CELLS
[J].
FANG, PH
论文数:
0
引用数:
0
h-index:
0
FANG, PH
;
SCHUBERT, CC
论文数:
0
引用数:
0
h-index:
0
SCHUBERT, CC
;
BEI, P
论文数:
0
引用数:
0
h-index:
0
BEI, P
;
KINNIER, JH
论文数:
0
引用数:
0
h-index:
0
KINNIER, JH
.
APPLIED PHYSICS LETTERS,
1982,
41
(04)
:365
-366
[4]
SUB-MICRON POLYCRYSTAL SILICON FILM SOLAR-CELLS
[J].
FANG, PH
论文数:
0
引用数:
0
h-index:
0
FANG, PH
;
SCHUBERT, CC
论文数:
0
引用数:
0
h-index:
0
SCHUBERT, CC
;
KINNIER, JH
论文数:
0
引用数:
0
h-index:
0
KINNIER, JH
;
PANG, D
论文数:
0
引用数:
0
h-index:
0
PANG, D
.
APPLIED PHYSICS LETTERS,
1981,
39
(03)
:256
-258
[5]
ELECTRICAL CHARACTERISTICS OF SCHOTTKY DIODES FABRICATED USING PLASMA ASSISTED CHEMICAL VAPOR-DEPOSITED DIAMOND FILMS
[J].
GILDENBLAT, GS
论文数:
0
引用数:
0
h-index:
0
机构:
PENN STATE UNIV,DEPT ELECT ENGN,UNIVERSITY PK,PA 16802
GILDENBLAT, GS
;
GROT, SA
论文数:
0
引用数:
0
h-index:
0
机构:
PENN STATE UNIV,DEPT ELECT ENGN,UNIVERSITY PK,PA 16802
GROT, SA
;
WRONSKI, CR
论文数:
0
引用数:
0
h-index:
0
机构:
PENN STATE UNIV,DEPT ELECT ENGN,UNIVERSITY PK,PA 16802
WRONSKI, CR
;
BADZIAN, AR
论文数:
0
引用数:
0
h-index:
0
机构:
PENN STATE UNIV,DEPT ELECT ENGN,UNIVERSITY PK,PA 16802
BADZIAN, AR
;
BADZIAN, T
论文数:
0
引用数:
0
h-index:
0
机构:
PENN STATE UNIV,DEPT ELECT ENGN,UNIVERSITY PK,PA 16802
BADZIAN, T
;
MESSIER, R
论文数:
0
引用数:
0
h-index:
0
机构:
PENN STATE UNIV,DEPT ELECT ENGN,UNIVERSITY PK,PA 16802
MESSIER, R
.
APPLIED PHYSICS LETTERS,
1988,
53
(07)
:586
-588
[6]
C-V CHARACTERISTICS OF SCHOTTKY BARRIERS ON LABORATORY GROWN SEMICONDUCTING DIAMONDS
[J].
GLOVER, GH
论文数:
0
引用数:
0
h-index:
0
机构:
GE, RES & DEV CTR, SCHENECTADY, NY 12301 USA
GE, RES & DEV CTR, SCHENECTADY, NY 12301 USA
GLOVER, GH
.
SOLID-STATE ELECTRONICS,
1973,
16
(09)
:973
-+
[7]
SZE SM, 1969, PHYSICS SEMICONDUCTO, P72
[8]
YAN ZC, COMMUNICATION
←
1
→