ON THE THEORY OF THE DIFFUSION OF GOLD INTO DISLOCATED SILICON-WAFERS

被引:5
作者
SEEGER, A [1 ]
FRANK, W [1 ]
机构
[1] UNIV STUTTGART, INST THEORET & ANGEW PHYS, D-7000 STUTTGART 80, FED REP GER
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1982年 / 27卷 / 03期
关键词
D O I
10.1007/BF00616669
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:171 / 176
页数:6
相关论文
共 28 条
[1]  
AGREST MM, 1971, THEORY INCOMPLETE CY
[2]   INFLUENCE OF DISLOCATIONS ON GOLD DIFFUSION INTO THIN SILICON SLICES [J].
BROTHERTON, SD ;
ROGERS, TL .
SOLID-STATE ELECTRONICS, 1972, 15 (08) :853-+
[3]   PROPERTIES OF GOLD IN SILICON [J].
BULLIS, WM .
SOLID-STATE ELECTRONICS, 1966, 9 (02) :143-&
[4]  
Byrd P.F., 1971, HDB ELLIPTIC INTEGRA
[5]   GOLD-INDUCED CLIMB OF DISLOCATIONS IN SILICON [J].
DASH, WC .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) :2275-2283
[6]   MECHANISM OF DIFFUSION OF COPPER IN GERMANIUM [J].
FRANK, FC ;
TURNBULL, D .
PHYSICAL REVIEW, 1956, 104 (03) :617-618
[7]  
FRANK W, 1978, I PHYS C SER, V46, P514
[8]  
FRANK W, 1981, ADV SOLID STATE PHYS, V21, P221
[9]   DISLOCATION JOGS AS SOURCES AND SINKS OF VACANCIES [J].
FRIEDEL, J ;
YOSHIDA, M .
PHILOSOPHICAL MAGAZINE, 1975, 31 (01) :229-231
[10]   MECHANISM AND KINETICS OF THE DIFFUSION OF GOLD IN SILICON [J].
GOSELE, U ;
FRANK, W ;
SEEGER, A .
APPLIED PHYSICS, 1980, 23 (04) :361-368