MINORITY-CARRIER INJECTION INTO RELAXATION SEMICONDUCTORS

被引：14

作者：

MOREAU, Y

MANIFACIER, JC

HENISCH, HK

机构：

[1] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802

[2] PENN STATE UNIV,DEPT PHYS,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 08期

关键词：

D O I：

10.1063/1.337076

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2904 / 2909

页数：6

共 22 条

[1] MEASUREMENTS ON THE DEMBER EFFECT IN THE RELAXATION SEMICONDUCTORS GAAS-O AND GAAS-CR [J].

BADICS, G ;

SZALMASSY, Z .

PHYSICS LETTERS A, 1979, 69 (05) :364-366

[2]

CAUGHEY DM, 1969, 2ND P BIENN CORN EL, P369

[3]

DOEHLER GH, 1973, PHYS REV LETT, V30, P1200

[4] THE IMPACT OF SUPERCOMPUTERS ON IC TECHNOLOGY DEVELOPMENT AND DESIGN [J].

FICHTNER, W ;

NAGEL, LW ;

PENUMALLI, BR ;

PETERSEN, WP ;

DARCY, JL .

PROCEEDINGS OF THE IEEE, 1984, 72 (01) :96-112

[5]

Fronzaroli P., STEB, V1, P65

[6] SELF-CONSISTENT ITERATIVE SCHEME FOR 1-DIMENSIONAL STEADY STATE TRANSISTOR CALCULATIONS [J].

GUMMEL, HK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (10) :455-&

[7] INFLUENCE OF DIELECTRIC-RELAXATION ON CURRENT FLOW IN HIGH-OHMIC SEMICONDUCTING DIODES [J].

HEDER, G ;

MADELUNG, O .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (01) :215-221

[8]

Henisch H K., 1984, SEMICONDUCTOR CONTAC

[9]

ILLEGEMES M, 1975, PHYS REV B, V12, P1443

[10] TRANSPORT IN RELAXATION SEMICONDUCTORS [J].

KIESS, H ;

ROSE, A .

PHYSICAL REVIEW LETTERS, 1973, 31 (03) :153-154

← 1 2 3 →