INFLUENCE OF DIELECTRIC-RELAXATION ON CURRENT FLOW IN HIGH-OHMIC SEMICONDUCTING DIODES

被引：9

作者：

HEDER, G ^{[1
]}

MADELUNG, O ^{[1
]}

机构：

[1] UNIV MARBURG,FACHBEREICH PHYS,MARBURG,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 30卷 / 01期

关键词：

D O I：

10.1002/pssa.2210300122

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：215 / 221

页数：7

共 13 条

[1] CONDUCTION IN RELAXATION-CASE SEMICONDUCTORS [J].

DOHLER, GH ;

HEYSZENAU, H .

PHYSICAL REVIEW LETTERS, 1973, 30 (24) :1200-1202

[2]

DOHLER GH, TO BE PUBLISHED

[3]

FUHS W, IN PRESS

[4]

HEDER G, 1975, THESIS U MARBURG

[5] TRANSPORT IN RELAXATION SEMICONDUCTORS [J].

KIESS, H ;

ROSE, A .

PHYSICAL REVIEW LETTERS, 1973, 31 (03) :153-154

[6] MINORITY-CARRIER INJECTION IN RELAXATION SEMICONDUCTORS [J].

POPESCU, C ;

HENISCH, HK .

PHYSICAL REVIEW B, 1975, 11 (04) :1563-1568

[7] CARRIER TRANSPORT AND POTENTIAL DISTRIBUTIONS FOR A SEMICONDUCTOR P-N JUNCTION IN RELAXATION REGIME [J].

QUEISSER, HJ ;

CASEY, HC ;

VANROOSB.W .

PHYSICAL REVIEW LETTERS, 1971, 26 (10) :551-&

[8]

QUEISSER HJ, 1972, SOLID STATE DEVICES, P145

[9] SHORT COMMENT ON SEMICONDUCTORS IN RELAXATION REGIME [J].

STOCKMANN, F .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 16 (02) :K157-K160

[10]

STOCKMANN F, 1957, Z PHYS, V147, P566

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