BASIC FEATURES OF TOTAL-REFLECTION X-RAY-FLUORESCENCE ANALYSIS ON SILICON-WAFERS

The effect observed in total-reflection X-ray fluorescence (TXRF) where the penetration depth of the exciting X-rays on flat and polished silicon samples is reduced to a few nanometres makes TXRF a valuable tool for wafer analysis. Some basic principles and parameters that describe the phenomena of total reflection are discussed in this paper. The important influence of the proper setting of the glancing angle on the correct and reproducible quantification of surface contaminations is demonstrated. Furthermore, an overview is given dealing with the basic features of direct measurements on wafers.