RECOMBINATION OF CORRELATED ELECTRON-HOLE PAIRS IN 2-DIMENSIONAL SEMICONDUCTORS

被引:38
作者
HANGLEITER, A
机构
[1] 4. Physikalisches Institut, Universität Stuttgart, D-70550 Stuttgart
来源
PHYSICAL REVIEW B | 1993年 / 48卷 / 12期
关键词
D O I
10.1103/PhysRevB.48.9146
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Coulomb interaction of electrons and holes in a two-dimensional semiconductor is shown to affect radiative and nonradiative recombination processes strongly. Our detailed calculations based on a many-body theory give the Coulomb correlation factors for a wide range of carrier densities and temperatures. For radiative recombination, a continuous transition between an excitonlike and a free-carrier-like behavior is revealed, which strongly influences the temperature dependence of the radiative lifetime. Auger recombination is strongly enhanced and its kinetic behavior is modified to look like classical radiative recombination up to fairly high temperatures.
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页码:9146 / 9149
页数:4
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