SIDE OPTICAL CAVITY, SINGLE QUANTUM-WELL DIODE-LASER

被引:14
作者
PARTIN, DL
HEREMANS, JP
THRUSH, CM
机构
关键词
D O I
10.1016/0749-6036(86)90012-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:459 / 464
页数:6
相关论文
共 16 条
[1]   OPTICAL BANDGAP AND MAGNETOOPTICAL EFFECTS IN (PB,EU)TE [J].
GOLTSOS, WC ;
NURMIKKO, AV ;
PARTIN, DL .
SOLID STATE COMMUNICATIONS, 1986, 59 (04) :183-186
[2]   GALVANOMAGNETIC PROPERTIES OF LEAD-TELLURIDE QUANTUM-WELLS [J].
HEREMANS, J ;
PARTIN, DL ;
DRESSELHAUS, PD ;
SHAYEGAN, M ;
DREW, HD .
APPLIED PHYSICS LETTERS, 1986, 48 (14) :928-930
[3]   MBE TECHNIQUES FOR IV-VI OPTOELECTRONIC DEVICES [J].
HOLLOWAY, H ;
WALPOLE, JN .
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (1-2) :49-94
[4]   GROWTH AND CHARACTERIZATION OF PB1-XEUXTE [J].
KROST, A ;
HARBECKE, B ;
FAYMONVILLE, R ;
SCHLEGEL, H ;
FANTNER, EJ ;
AMBROSCH, KE ;
BAUER, G .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (10) :2119-2143
[5]   SINGLE HETEROSTRUCTURE LASERS OF PBS1-XSEX AND PB1-XSNXSE WITH WIDE TUNABILITY [J].
LINDEN, KJ ;
NILL, KW ;
BUTLER, JF .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) :720-725
[6]  
NORTON P, 1985, J VACUUM SCI TECHN B, P782
[7]   WAVELENGTH COVERAGE OF LEAD-EUROPIUM-SELENIDE-TELLURIDE DIODE-LASERS [J].
PARTIN, DL ;
THRUSH, CM .
APPLIED PHYSICS LETTERS, 1984, 45 (03) :193-195
[8]   SINGLE QUANTUM WELL LEAD-EUROPIUM-SELENIDE-TELLURIDE DIODE-LASERS [J].
PARTIN, DL .
APPLIED PHYSICS LETTERS, 1984, 45 (05) :487-489
[9]   LEAD SALT QUANTUM WELL DIODE-LASERS [J].
PARTIN, DL .
SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (02) :131-135
[10]   LEAD-EUROPIUM-SELENIDE-TELLURIDE GROWN BY MOLECULAR-BEAM EPITAXY [J].
PARTIN, DL .
JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (03) :493-504